Polymorphous Silicon Films Deposited at 27.12 MHz (pages 333–337)
R. Martins, H. Águas, I. Ferreira, E. Fortunato, S. Lebib, P. Roca i Cabarrocas and L. Guimarães
Article first published online: 12 DEC 2003 | DOI: 10.1002/cvde.200306261
A new type of polymorphous-Si:H is successfully produced for the first time using a 27.12 MHz plasma-enhanced CVD process. The study shows that monitoring the plasma impedance is a key element in this process which produces growth rates as high as 0.31 nm s-1. Results from spectroscopic ellipsometry and exodiffusion data indicate that the polymorphous silicon films deposited at 27.12 MHz are much denser than those produced at 13.56 MHz. FTIR data reveal low SiH2 contents and a typical peak at 2030 cm–1 is missing, indicating that the deposited polymorphous silicon film structure is different from the films grown at 13.56 MHz.