Vertical-type organic device using thin-film ZnO transparent electrode
Article first published online: 13 NOV 2006
Copyright © 2006 Wiley Periodicals, Inc.
Electrical Engineering in Japan
Volume 158, Issue 2, pages 49–55, 30 January 2007
How to Cite
Iechi, H., Okawara, T., Sakai, M., Nakanura, M. and Kudo, K. (2007), Vertical-type organic device using thin-film ZnO transparent electrode. Elect. Eng. Jpn., 158: 49–55. doi: 10.1002/eej.20151
- Issue published online: 13 NOV 2006
- Article first published online: 13 NOV 2006
- Japan Ministry of Education, Culture, Sports, Science and Technology (B14390012).
- vertical-type organic device;
- zinc oxide;
- transparent electrode;
- organic light-emitting diode.
We propose a double heterojunction organic light-emitting diode (OLED) using a zinc oxide (ZnO) film, which works as a transparent and electron injection layer. The crystal structure of the ZnO films as a function of Ar/O2 flow ratio and the basic characteristics of the OLED depending on the ZnO sputtering conditions are investigated. Excellent characteristics of the novel OLED were obtained, as high as 470 cd/m2 at 22 V and 7.6 mA/cm2. The results obtained here demonstrate that the vertical organic light-emitting transistor (OLET) using a ZnO layer as an electron injection layer is promising as a key element for flexible sheet displays. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 158(2): 49–55, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20151