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Full Paper
Sensing with Nafion Coated Carbon Nanotube Field-Effect Transistors
Article first published online: 26 JAN 2004
DOI: 10.1002/elan.200302925
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
1521-4109/asset/cover.gif?v=1&s=209b447dcf920ba3fb44f2b08a87a6b586320422 "Electroanalysis")
Additional Information
How to Cite
Star, A., Han, T.-R., Joshi, V. and Stetter, Joseph R. (2004), Sensing with Nafion Coated Carbon Nanotube Field-Effect Transistors. Electroanalysis, 16: 108–112. doi: 10.1002/elan.200302925
Publication History
- Issue published online: 26 JAN 2004
- Article first published online: 26 JAN 2004
- Manuscript Accepted: 15 AUG 2003
- Manuscript Received: 30 JUN 2003
- Abstract
- References
- Cited By
Keywords:
- Single-walled carbon nanotubes field-effect transitors (NTFETs);
- Nafion membranes;
- Relative humidity sensor
Abstract
Sequential CVD and CMOS processes were used to make a FET that has single walled carbon nanotubes to serve as the conducting source to drain channel. This structure can be decorated to provide gas and liquid responses and herein is evaluated as a humdity sensor. The Na+, K+, and Ca2+ ion-exchanged Nafion polymer acts as the chemically sensitive layer in this electrochemical sensor. The effect of gate voltage on the charge-sensitive NT structure was found to be RH dependent over the range of 12–93% RH with msec response time.