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Full Paper
Effect of Platinum and Ruthenium Incorporation on Voltammetric Behavior of Nitrogen Doped Diamond-Like Carbon Thin Films
Article first published online: 12 NOV 2009
DOI: 10.1002/elan.200900250
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
1521-4109/asset/cover.gif?v=1&s=209b447dcf920ba3fb44f2b08a87a6b586320422 "Electroanalysis")
Additional Information
How to Cite
Khun, N. W. and Liu, E. (2009), Effect of Platinum and Ruthenium Incorporation on Voltammetric Behavior of Nitrogen Doped Diamond-Like Carbon Thin Films. Electroanalysis, 21: 2590–2596. doi: 10.1002/elan.200900250
Publication History
- Issue published online: 27 NOV 2009
- Article first published online: 12 NOV 2009
- Manuscript Accepted: 18 JUL 2009
- Manuscript Received: 12 MAY 2009
- Abstract
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Keywords:
- N-DLC and PtRuN-DLC thin films;
- Magnetron sputtering;
- Cyclic voltammetry;
- Voltammetry;
- Thin films
Abstract
Nitrogen doped diamond-like carbon thin films with or without platinum and ruthenium incorporation (N-DLC or PtRuN-DLC) were deposited on highly conductive p-Si substrates by DC magnetron sputtering to study the effect of Pt and Ru doping on the voltammetric performance of the N-DLC films. The potential windows of these film electrodes were measured in different electrolytic solutions, such as H2SO4, HCl and KCl. The cyclic voltammograms obtained from the N-DLC film electrodes in these solutions showed wide potential windows while the introduction of Pt and Ru into the film electrodes apparently narrowed down the potential windows due to their catalytic activities.