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Keywords:

  • Graphene oxide;
  • Field-effect transistors;
  • Aptamer;
  • Hg2+ ions;
  • Sensors;
  • DNA

Abstract

Graphene oxide (GO) is deposited onto the Al2O3 gates of field-effect transistor devices to yield a functional matrix for the sensing of thrombin or Hg2+ ions. The deposition of an aptamer subunit against thrombin or a tailored nucleic acid with appropriate T mismatches on the GO, yield active surfaces for the analysis of thrombin or Hg2+ ions. The desorption of the aptamer-subunit from GO, through the formation of the aptamer-thrombin complex, or the desorption of the T–Hg2+–T-bridged duplex DNA alter the gate potential, thus providing a signal for the sensing events.