Electronic structure and low temperature thermoelectric properties of In24 M8 O48 (M = Ge4+, Sn4+, Ti4+, and Zr4+)
Article first published online: 26 SEP 2011
Copyright © 2011 Wiley Periodicals, Inc.
Journal of Computational Chemistry
Volume 33, Issue 1, pages 88–92, 5 January 2012
How to Cite
Yan, Y. L. and Wang, Y. X. (2012), Electronic structure and low temperature thermoelectric properties of In24 M8 O48 (M = Ge4+, Sn4+, Ti4+, and Zr4+). J. Comput. Chem., 33: 88–92. doi: 10.1002/jcc.21947
- Issue published online: 4 NOV 2011
- Article first published online: 26 SEP 2011
- Manuscript Accepted: 16 AUG 2011
- Manuscript Revised: 27 JUL 2011
- Manuscript Received: 19 JAN 2011
- National Natural Science Foundation of China. Grant Number: 21071045
- Program for New Century Excellent Talents in University. Grant Number: NCET-10-0132
- Foundation of Henan University. Grant Number: SBGJ090508
- Youth Fund of the National Natural Science Foundation of China. Grant Number: 11004048
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