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Keywords:

  • metal semiconductor field effect transistor;
  • breakdown voltage;
  • two-dimensional (2D) simulation

ABSTRACT

In this paper, we employ the Reduced Surface Field technique in metal semiconductor field effect transistors (MESFETs) by a P-type region above the active layer near gate (PR-MESFET). Electric field distribution can be made more uniform by a new depletion region in the active layer of the proposed structure that is created by a P-type region. ‏‏Therefore, the electric field peak at the gate edge decreases, and the breakdown voltage increases. On the basis of our simulation results, the breakdown voltage increases as compared with the conventional bulk 4H-SiC MESFET (CB-MESFET) and the spacer bulk 4H-SiC MESFET (SB-MESFET). Detailed numerical simulations demonstrate that for proposed structure due to decrease in parasitic gate-to-drain capacitor, maximum oscillation frequency increases with respect to SB-MESFET. Our simulation results show that output current slightly decreases in comparison with CB-MESFET. Copyright © 2012 John Wiley & Sons, Ltd.