A physically based diode model for circuit simulation


Correspondence to: T. B. Salah, University of Tunis El Manar, ENIT, L.natS.E - B.P.37, Tunis Le Bélvédère, Tunisia.

E-mail: Tarek.bensalah@insalien.org


A physically based power PiN diode model is presented. Eigen value internal approximation method is used to solve the ambipolar diffusion equation. This model is implemented in SIMPLORER circuit simulator using VHDL-AMS language. The proposed model can be used in both circuit simulators and the optimization of a given power PiN diode. Good agreement is obtained by comparing the results of the suggested model with experimental data. Copyright © 2013 John Wiley & Sons, Ltd.