Modeling of peak voltage and current of nanowire resonant tunneling devices: case study on InAs/InP double-barrier heterostructures
Article first published online: 2 JUL 2013
Copyright © 2013 John Wiley & Sons, Ltd.
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume 26, Issue 5, pages 506–517, September/October 2013
How to Cite
Ragi, R., da Nobrega, R. V.T. and Romero, M. A. (2013), Modeling of peak voltage and current of nanowire resonant tunneling devices: case study on InAs/InP double-barrier heterostructures. Int. J. Numer. Model., 26: 506–517. doi: 10.1002/jnm.1911
- Issue published online: 2 AUG 2013
- Article first published online: 2 JUL 2013
- Manuscript Accepted: 1 MAY 2013
- Manuscript Revised: 28 MAR 2013
- Manuscript Received: 25 JUN 2012
- resonant tunneling;
In this paper, we develop an analytical model for the prediction of the peak voltage and the current in the current–voltage characteristics of nanowire resonant tunneling heterostructures. The model is applied in the case study of double-barrier InAs/InP devices, and the results are obtained from numerical carrier transport calculations, in terms of structural parameters such as the nanowire radius as well as the width of the barriers and quantum well. Copyright © 2013 John Wiley & Sons, Ltd.