Modeling of peak voltage and current of nanowire resonant tunneling devices: case study on InAs/InP double-barrier heterostructures

Authors


Correspondence to: M. A. Romero, Electrical and Computer Engineering Department, University of Sao Paulo, EESC/USP, Sao Carlos, SP, Brazil.

E-mail: murilo.romero@usp.br

SUMMARY

In this paper, we develop an analytical model for the prediction of the peak voltage and the current in the current–voltage characteristics of nanowire resonant tunneling heterostructures. The model is applied in the case study of double-barrier InAs/InP devices, and the results are obtained from numerical carrier transport calculations, in terms of structural parameters such as the nanowire radius as well as the width of the barriers and quantum well. Copyright © 2013 John Wiley & Sons, Ltd.

Ancillary