Semi-analytical non-charge-sheet and non-depletion MOS model, for inversion charge calculation

Authors

  • Roger Cabré Rodon,

    Corresponding author
    1. Department of Electronic, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, Tarragona, Spain
    • Correspondence to: Roger Cabré Rodon. Department of Electronic, Electrical and Automatic Control Engineering of Universitat Rovira i Virgili. Tarragona, Spain.

      E-mail: roger.cabre@urv.cat

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  • Benjamin Iñiguez

    1. Department of Electronic, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, Tarragona, Spain
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ABSTRACT

A new computationally implemented semi-analytic mathematical model is presented to obtain a more accurate estimation of the inversion charge in a MOS structure than standard models. The values of the error of the inversion charge obtained are compared with the assumed ‘exact’ numerical calculated values. These errors are appreciably smaller than the estimation coming from the classical charge-sheet and depletion approximations. Also the calculation time to obtain the inversion charge is shown to be significantly lower than the numerical one.

Because of its accuracy and its relatively low computational speed, the proposed model is a good alternative methodology for the calculation of the inversion charge of MOSFET transistors as a function of their physical features and gate bias voltage. In this sense it should be very useful to be implemented by computer-aided design integrated circuit simulation software. Copyright © 2013 John Wiley & Sons, Ltd.

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