Modelling CoolMOSC3 transistor characteristics in SPICE
Article first published online: 1 SEP 2009
Copyright © 2009 John Wiley & Sons, Ltd.
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume 23, Issue 2, pages 127–139, March/April 2010
How to Cite
Górecki, K. and Zarębski, J. (2010), Modelling CoolMOSC3 transistor characteristics in SPICE. Int. J. Numer. Model., 23: 127–139. doi: 10.1002/jnm.727
- Issue published online: 21 JAN 2010
- Article first published online: 1 SEP 2009
- Manuscript Accepted: 8 JUL 2009
- Manuscript Revised: 3 JUL 2009
- Manuscript Received: 24 MAR 2009
- CoolMOS transistor;
In this paper three models of CoolMOSC3 transistors worked out by Infineon Technologies, dedicated for SPICE, are presented and investigated. These models are verified experimentally both for dc and ac device operating conditions. The advantages and drawbacks of the investigated models are shown and discussed. The device operating conditions, at which the models are of acceptable accuracy, are identified. Copyright © 2009 John Wiley & Sons, Ltd.