Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances

Authors

  • Oana Moldovan,

    Corresponding author
    1. Departament d'Enginyeria Electrònica, Escola Tècnica Superior d'Enginyeria, Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Spain
    • Departament d'Enginyeria Electrònica, Escola Tècnica Superior d'Enginyeria, Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Spain
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  • Ferney A. Chaves,

    1. Departament d'Enginyeria Electrònica, Escola Tècnica Superior d'Enginyeria, Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Spain
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  • David Jiménez,

    1. Departament d'Enginyeria Electrònica, Escola Tècnica Superior d'Enginyeria, Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Spain
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  • Jean-Pierre Raskin,

    1. Microwave Laboratory, Université catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
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  • Benjamin Iñiguez

    1. Departament d'Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, 43007, Tarragona, Spain
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Abstract

This paper demonstrates the capability of our previously published undoped Double-Gate (DG) MOSFET explicit and analytical compact model to also forecast the effect of the volume inversion (VI) on the intrinsic capacitances. For that purpose, we present simulation results for these capacitances. We show now that the model presents an accurate dependence on the silicon layer thickness, consistent with two-dimensional numerical simulations, for both thin and thick silicon films. As opposed to our previous work, here we test the capacitance model for three different film thicknesses and also show that the transition from VI regime to dual gate behaviour is well simulated. We demonstrate in this paper that even if the current drive and transconductance are enhanced in VI regime, our results show that intrinsic capacitances are higher as well, which may limit the high-speed (delay time) behaviour of DG MOSFETs under VI regime. The good agreement between the numerical simulations and our model shows the high potential of our complete DG MOSFET model. Copyright © 2010 John Wiley & Sons, Ltd.

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