A novel method for measuring distribution of orientation of one-dimensional ZnO using resonance Raman spectroscopy

Authors

  • Xinghua Zhang,

    1. Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024, P. R. China
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  • Yichun Liu,

    Corresponding author
    1. Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024, P. R. China
    • Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, 5268 Renmin Street, Changchun 130024, P. R. China, also at Key Laboratory of Excited State Processes, Chinese Academy of Sciences, China.
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  • Shihao Chen

    1. Institute of Theoretical Physics, Northeast Normal University, Changchun 130024, P. R. China
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Abstract

A spectroscopic method of characterizing the growth orientation of low-dimensional ZnO structures is proposed on the basis of the angular dispersion of polar phonon modes. According to this approach, the orientational distribution of a randomly oriented one-dimensional ZnO structure can be measured quantitatively by studying the line-shape of polar phonon bands. Multiphonon resonance Raman spectroscopy was used to investigate the details of the polar optical phonon mode. Copyright © 2005 John Wiley & Sons, Ltd.

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