Raman spectral study on the thermal stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si structures

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Abstract

Nickel silicide is becoming an important candidate material for the future generation of complementary metal-oxide semiconductor (CMOS) devices and nanowire hetero-structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwich structure, a new Ni/Zr/Ni/Si structure can raise the temperature of thermal stability from 650 °C to above 800 °C, thereby helping to improve device technology. Copyright © 2006 John Wiley & Sons, Ltd.

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