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Raman imaging on high-quality graphene grown by hot-filament chemical vapor deposition

Authors


S. Kataria, Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore-560017, India.

E-mail: skataria2k2@gmail.com

Harish C. Barshilia, Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore-560017, India.

E-mail: harish@nal.res.in

Abstract

We report the synthesis of high-quality graphene on Cu foils using hot-filament chemical vapor deposition technique and demonstrate that by suitably varying the CH4 and H2 flow rates, one can also obtain hydrogenated graphene. Micro-Raman spectroscopy studies confirm the growth of monolayer graphene as inferred from the intensity ratio of 2D to G peak which is nearly four in unhydrogenated samples. Detailed Raman area mapping confirms the uniform coverage of monolayer graphene. The grown layer is also transferred onto a Si substrate over ~10 × 10 mm sq. area. The present results provide a leap in synthesis technology of high-quality graphene and pave way for scaling up the process. Copyright © 2012 John Wiley & Sons, Ltd.

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