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Supporting information may be found in the online version of this article.

Supporting information may be found in the online version of this article.

FilenameFormatSizeDescription
jrs_4143_sm_table.docWord document43KTable S1: Values of wavenumber and FWHM of different Raman modes measured using UV excitation source for Ce implanted n-GaN samples.
jrs_4143_sm_f1.TIFTIFF image1115KFig: S1. (ω-2θ) XRD scans for as-grown and Ce implanted (a) n-GaN and (b) p-GaN samples annealed at 900 °C showing (0002), (0004) GaN and (0006), (00012) Sapphire peaks.
jrs_4143_sm_f2.TIFTIFF image678KFig: S2. XRD scans showing (0002) GaN peak of Ce implanted n- and p-GaN samples. All spectra are Gaussian fitted to find the position of subsidiary peaks. The panels given on right side show (0002) peaks (logarithmic Intensity scale) for n-GaN samples before and after annealing.

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