Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance
Article first published online: 15 JUL 2012
Copyright © 2012 John Wiley & Sons, Ltd.
Journal of Raman Spectroscopy
Volume 44, Issue 1, pages 142–146, January 2013
How to Cite
Yu, W., Han, M., Jiang, K., Duan, Z., Li, Y., Hu, Z. and Chu, J. (2013), Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance. J. Raman Spectrosc., 44: 142–146. doi: 10.1002/jrs.4145
- Issue published online: 9 JAN 2013
- Article first published online: 15 JUL 2012
- Manuscript Accepted: 10 JUN 2012
- Manuscript Revised: 6 JUN 2012
- Manuscript Received: 19 APR 2012
- cuprous oxide;
- Fröhlich interaction;
- Raman spectroscopy
Anomalous low temperature behaviors in cuprous oxide (Cu2O) film grown on quartz substrate have been investigated by temperature-dependent Raman and transmittance spectra. The longitudinal optical components of two Γ15- phonon modes become sharper and more intense at a low temperature. It can be found that the highest-order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron–phonon coupling mediated by Fröhlich interaction in the Cu2O films below the temperature of 200 K. Copyright © 2012 John Wiley & Sons, Ltd.