Imaging of internal stress around a mineral inclusion in a sapphire crystal: application of micro-Raman and photoluminescence spectroscopy
Article first published online: 2 OCT 2012
Copyright © 2012 John Wiley & Sons, Ltd.
Journal of Raman Spectroscopy
Volume 44, Issue 1, pages 147–154, January 2013
How to Cite
Noguchi, N., Abduriyim, A., Shimizu, I., Kamegata, N., Odake, S. and Kagi, H. (2013), Imaging of internal stress around a mineral inclusion in a sapphire crystal: application of micro-Raman and photoluminescence spectroscopy. J. Raman Spectrosc., 44: 147–154. doi: 10.1002/jrs.4161
- Issue published online: 9 JAN 2013
- Article first published online: 2 OCT 2012
- Manuscript Accepted: 8 JUL 2012
- Manuscript Revised: 3 JUL 2012
- Manuscript Received: 24 APR 2012
- micro-Raman spectroscopy;
- photoluminescence spectroscopy;
- internal stress
We developed a micro-Raman and photoluminescence imaging technique for visualizing the internal stress fields in a sapphire crystal. The technique was applied to an Australian sapphire gemstone with a zircon inclusion. Considering piezospectroscopic effects on Raman and photoluminescence spectra, the Raman shifts of sapphire around the zircon inclusion were converted to hydrostatic pressure and deviatoric components of stress tensor. The internal stress was highly concentrated at the tips of the zircon crystal, where the deviatoric stress and the hydrostatic pressure component reached 700 and 470 MPa, respectively. Generation of compressive stress on the crystal surface of zircon can be explained by the difference in thermal expansion coefficients and elastic constants between sapphire and zircon. In general, internal stress fields induced by mineral inclusions reflect the pressure and temperature conditions at which the host sapphire gemstones were crystallized. Thus, the present technique can be utilized to identify the origin of gemstones. Copyright © 2012 John Wiley & Sons, Ltd.