Triply resonant Raman scattering in perovskite semiconductor CsSnI3
Version of Record online: 2 OCT 2012
Copyright © 2012 John Wiley & Sons, Ltd.
Journal of Raman Spectroscopy
Volume 44, Issue 2, pages 262–265, February 2013
How to Cite
Yu, C., Chen, Z. and Shum, K. (2013), Triply resonant Raman scattering in perovskite semiconductor CsSnI3. J. Raman Spectrosc., 44: 262–265. doi: 10.1002/jrs.4180
- Issue online: 24 JAN 2013
- Version of Record online: 2 OCT 2012
- Manuscript Accepted: 7 AUG 2012
- Manuscript Revised: 28 JUL 2012
- Manuscript Received: 17 MAR 2012
- second-order Raman scattering;
- triple resonance;
- perovskite semiconductor CsSnI3
We report on the first-order and second-order Raman scattering (SORS) by longitudinal optical (LO) phonons in perovskite semiconductor CsSnI3. The intensity of SORS is stronger than that of the first order. The spectral line shape of SORS is asymmetric and much broader than that of the first order. It is identified that the strong SORS intensity is attributable to the triply enhanced resonant process, which is naturally implemented through the peculiar band structure of this semiconductor compound having two adjacent parallel conduction bands with a separation close to the energy of two LO phonons. Copyright © 2012 John Wiley & Sons, Ltd.