The influence of impurity formation on electron inelastic scattering of suspended graphene

Authors


Correspondence to: Chang Jiang Chen, Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan. E-mail: chene8892@gmail.com

Abstract

This study reports on controlling the formation of nanoimpurities on suspended graphene to investigate the inelastic scattering of electrons using a two-phonon Raman process. Results were analyzed by transmission electron microscopy (TEM) and scanning Raman spectroscopy in the same region of suspended graphene. The findings revealed that the area with a higher concentration of impurities shown in the TEM image corresponds directly to the area with a lower integrated intensity and a wider full width at half maximum in the Raman mapping of the 2D band and vice versa. The same trend is also apparent in the 2D′ and D + D″ bands. In conclusion, the results are explained by an increase in the electronic scattering rate due to impurities, which affects two-phonon Raman scattering. Combining the TEM image and Raman mapping image effectively demonstrates how electron behavior is affected by the distribution of impurities in graphene systems. Copyright © 2012 John Wiley & Sons, Ltd.

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