The influence of impurity formation on electron inelastic scattering of suspended graphene
Article first published online: 28 NOV 2012
Copyright © 2012 John Wiley & Sons, Ltd.
Journal of Raman Spectroscopy
Volume 44, Issue 3, pages 421–424, March 2013
How to Cite
Chen, C.-J. (2013), The influence of impurity formation on electron inelastic scattering of suspended graphene. J. Raman Spectrosc., 44: 421–424. doi: 10.1002/jrs.4212
- Issue published online: 19 MAR 2013
- Article first published online: 28 NOV 2012
- Manuscript Revised: 4 OCT 2012
- Manuscript Accepted: 4 OCT 2012
- Manuscript Received: 17 DEC 2011
- suspended graphene;
- electronic scattering
This study reports on controlling the formation of nanoimpurities on suspended graphene to investigate the inelastic scattering of electrons using a two-phonon Raman process. Results were analyzed by transmission electron microscopy (TEM) and scanning Raman spectroscopy in the same region of suspended graphene. The findings revealed that the area with a higher concentration of impurities shown in the TEM image corresponds directly to the area with a lower integrated intensity and a wider full width at half maximum in the Raman mapping of the 2D band and vice versa. The same trend is also apparent in the 2D′ and D + D″ bands. In conclusion, the results are explained by an increase in the electronic scattering rate due to impurities, which affects two-phonon Raman scattering. Combining the TEM image and Raman mapping image effectively demonstrates how electron behavior is affected by the distribution of impurities in graphene systems. Copyright © 2012 John Wiley & Sons, Ltd.