Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths
Version of Record online: 14 MAR 2013
Copyright © 2013 John Wiley & Sons, Ltd.
Journal of Raman Spectroscopy
Volume 44, Issue 5, pages 665–669, May 2013
How to Cite
Sanson, A., Giarola, M., Napolitani, E., Impellizzeri, G., Privitera, V., Carnera, A. and Mariotto, G. (2013), Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths. J. Raman Spectrosc., 44: 665–669. doi: 10.1002/jrs.4249
- Issue online: 10 MAY 2013
- Version of Record online: 14 MAR 2013
- Manuscript Accepted: 11 DEC 2012
- Manuscript Revised: 14 NOV 2012
- Manuscript Received: 12 OCT 2012
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