The improvement of InAs/GaAs quantum dot properties capped by Graphene
Version of Record online: 17 SEP 2013
Copyright © 2013 John Wiley & Sons, Ltd.
Journal of Raman Spectroscopy
Volume 44, Issue 11, pages 1529–1533, November 2013
How to Cite
Rezgui, K., Othmen, R., Cavanna, A., Ajlani, H., Madouri, A. and Oueslati, M. (2013), The improvement of InAs/GaAs quantum dot properties capped by Graphene. J. Raman Spectrosc., 44: 1529–1533. doi: 10.1002/jrs.4382
- Issue online: 8 NOV 2013
- Version of Record online: 17 SEP 2013
- Manuscript Accepted: 18 AUG 2013
- Manuscript Revised: 17 AUG 2013
- Manuscript Received: 8 JUN 2013
Figure S1. Raman 2D peak deconvolution of a few layers graphene capped quantum dots sample.
Figure S2. Raman spectra of uncapped, graphene and GaAs cap layers quantum dot samples. The dashed lines indicate the wavenumber of GaAs TO and LO modes.
Figure S3. The LO GaAs-like modes measured in the graphene and GaAs capped quantum dot samples.
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