Quantitative analysis of hydrogen in amorphous silicon using Raman scattering spectroscopy

Authors

  • V. A. Volodin,

    Corresponding author
    1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
    2. Novosibirsk State University, Novosibirsk, Russia
    • Correspondence to: V. A. Volodin, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Lavrentiev Ave, 13, Novosibirsk, 630090 Russia.

      E-mail: volodin@isp.nsc.ru

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  • D. I. Koshelev

    1. Novosibirsk State University, Novosibirsk, Russia
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Abstract

Hydrogenated amorphous silicon (a-Si:H) films were studied using infrared and Raman spectroscopy. We have experimentally found that ratios of Raman scattering cross-sections for Si–H to Si–Si bonds and for Si–H2 to Si–Si bonds are equal to 0.65 ± 0.07 and 0.25 ± 0.03, respectively. It allows to measure the concentration of hydrogen in a-Si:H films. The developed approach can be applied for in situ control of hydrogen in a-Si:H films and also suitable for thin a-Si:H films on substrates that are opaque in infrared spectral region. Copyright © 2013 John Wiley & Sons, Ltd.

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