Quantitative analysis of hydrogen in amorphous silicon using Raman scattering spectroscopy
Article first published online: 16 NOV 2013
Copyright © 2013 John Wiley & Sons, Ltd.
Journal of Raman Spectroscopy
Volume 44, Issue 12, pages 1760–1764, December 2013
How to Cite
Volodin, V. A. and Koshelev, D. I. (2013), Quantitative analysis of hydrogen in amorphous silicon using Raman scattering spectroscopy. J. Raman Spectrosc., 44: 1760–1764. doi: 10.1002/jrs.4408
- Issue published online: 13 DEC 2013
- Article first published online: 16 NOV 2013
- Manuscript Revised: 10 OCT 2013
- Manuscript Accepted: 10 OCT 2013
- Manuscript Received: 6 AUG 2013
- amorphous hydrogenated silicon;
- Si–H bonds;
- hydrogen concentration
Hydrogenated amorphous silicon (a-Si:H) films were studied using infrared and Raman spectroscopy. We have experimentally found that ratios of Raman scattering cross-sections for Si–H to Si–Si bonds and for Si–H2 to Si–Si bonds are equal to 0.65 ± 0.07 and 0.25 ± 0.03, respectively. It allows to measure the concentration of hydrogen in a-Si:H films. The developed approach can be applied for in situ control of hydrogen in a-Si:H films and also suitable for thin a-Si:H films on substrates that are opaque in infrared spectral region. Copyright © 2013 John Wiley & Sons, Ltd.