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  • 1
    T. Räder et al.: “0.4 % Absolute Efficiency Gain of Crystalline Silicon Solar Sells by Laser Doped Selective Emitters”. Proceedings of the 34th IEEE PVSC. 2009, Philadelphia; Spectra Physics, a division of Newport Corporation, “18.5 % Laser-Doped Solar Cell On Cz P-Type Silicon”, IEEE 35th PVSC Conference, 06/2010.
  • 2
    United States Patent 6,429,037, “Self aligning method for forming a selective emitter and metallization in a solar cell”.
  • 3
    P. Oesterlin, U. Jäger, H-U. Zühlke, A. Büchel: “Industrialization of the Laser Diffsuion Process: Innovative Concepts for Increased Production Throughput”, 25th European Photovoltaic Solar Energy Conference and Exhibition 2010.
  • 4
    U. Jäger, P. Oesterlin, A. Kimmerle, R. Preu: “Beam Shaping – The Key to High Throughput Selective Emitter Laser Processing with a Single Laser System”, Presented at the 35th PVSC, June 20 25, 2010, Honolulu, Hawaii.