Article first published online: 2 JUN 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Laser & Photonics Reviews
Volume 3, Issue 6, pages 508–534, November 2009
How to Cite
Daldosso, N. and Pavesi, L. (2009), Nanosilicon photonics. Laser & Photon. Rev., 3: 508–534. doi: 10.1002/lpor.200810045
- Issue published online: 23 OCT 2009
- Article first published online: 2 JUN 2009
- Manuscript Accepted: 11 MAR 2009
- Manuscript Revised: 6 FEB 2009
- Manuscript Received: 25 AUG 2008
- EC. Grant Numbers: LANCER (FP6-033574), PHOLOGIC (FP6-017158), POLYCERNET (MCRTN-019601), WADIMOS (FP7-216405), HELIOS (FP7-224312)
- PAT. Grant Numbers: HCSC, NAOMI
- optical amplification;
- non-linear properties.
Silicon photonics is no longer an emerging field of research and technology but a present reality with commercial products available on the market, where low-dimensional silicon (nanosilicon or nano-Si) can play a fundamental role. After a brief history of the field, the optical properties of silicon reduced to nanometric dimensions are introduced. The use of nano-Si, in the form of Si nanocrystals, in the main building blocks of silicon photonics (waveguides, modulators, sources and detectors) is reviewed and discussed. Recent advances of nano-Si devices such as waveguides, optical resonators (linear, rings, and disks) are treated. Emphasis is placed on the visible optical gain properties of nano-Si and to the sensitization effect on Er ions to achieve infrared light amplification. The possibility of electrical injection in light-emitting diodes is presented as well as the recent attempts to exploit nano-Si for solar cells. In addition, nonlinear optical effects that will enable fast all-optical switches are described.