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Optimization of direct modulation rate for circular microlasers by adjusting mode Q factor

Authors

  • Xiao-Meng Lv,

    1. Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Haidian District, Beijing, P R China
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  • Yong-Zhen Huang,

    Corresponding author
    • Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Haidian District, Beijing, P R China
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  • Ling-Xiu Zou,

    1. Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Haidian District, Beijing, P R China
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  • Heng Long,

    1. Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Haidian District, Beijing, P R China
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  • Yun Du

    1. Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Haidian District, Beijing, P R China
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Corresponding author: e-mail: yzhuang@semi.ac.cn

Abstract

Semiconductor microcircular lasers have been investigated as potential light sources for photonic integrated circuits and optical interconnections for more than two decades. However, the direct modulation bandwidths of the circular microlasers remain a challenge, especially when being compared with other microlasers, such as photonic crystal lasers. In this paper, microcircular lasers connected to an output waveguide are investigated for high-speed direct modulation with optimized mode Q factors. Small signal modulation with a resonance frequency of fR = 12.5 GHz is realized for a AlGaInAs/InP circular microlaser with a radius of 10 µm at 290 K. Furthermore, clear eye diagrams are observed at 12.5 Gbit/s for a 15-µm radius circular microlaser with fR = 6.9 GHz.

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