4H-SiC: a new nonlinear material for midinfrared lasers

Authors

  • Shunchong Wang,

    1. Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Minjie Zhan,

    1. Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Gang Wang,

    Corresponding author
    • Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Hongwen Xuan,

    1. Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Wei Zhang,

    1. Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Chunjun Liu,

    1. Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Chunhua Xu,

    1. Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Yu Liu,

    1. Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Zhiyi Wei,

    1. Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Xiaolong Chen

    Corresponding author
    • Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
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Corresponding authors: e-mail: gangwang@iphy.ac.cn; chenx29@iphy.ac.cn

Abstract

Nonlinear optical (NLO) frequency conversion is commonly used for generating midinfrared (MIR) lasers that offer light sources for a variety of applications. However, the low laser damage thresholds of NLO crystals used so far seriously limit the output power of MIR lasers. Here, a new nonlinear material 4H-SiC is demonstrated for producing MIR laser. Broadband MIR radiation ranging from 3.90 to 5.60 μm is generated in 4H-SiC by phase-matched difference-frequency generation for the first time. The results may open a door to practically utilize wide-bandgap semiconductors with high laser damage thresholds as NLO materials for high power output of MIR lasers.

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