Nonlinear optical (NLO) frequency conversion is commonly used for generating midinfrared (MIR) lasers that offer light sources for a variety of applications. However, the low laser damage thresholds of NLO crystals used so far seriously limit the output power of MIR lasers. Here, a new nonlinear material 4H-SiC is demonstrated for producing MIR laser. Broadband MIR radiation ranging from 3.90 to 5.60 μm is generated in 4H-SiC by phase-matched difference-frequency generation for the first time. The results may open a door to practically utilize wide-bandgap semiconductors with high laser damage thresholds as NLO materials for high power output of MIR lasers.