Water-Developable Poly(2-oxazoline)-Based Negative Photoresists

Authors

  • Verena Schenk,

    1. Polymer Competence Center Leoben GmbH PCCL, Roseggerstrasse 12, 8700 Leoben, Austria
    Search for more papers by this author
  • Lisa Ellmaier,

    1. Polymer Competence Center Leoben GmbH PCCL, Roseggerstrasse 12, 8700 Leoben, Austria
    2. Graz University of Technology, Institute for Chemistry and Technology of Materials, Stremayrgasse 9/V, 8010 Graz, Austria, Fax: (+ 43) 316 873 10 32283
    Search for more papers by this author
  • Elisabeth Rossegger,

    1. Polymer Competence Center Leoben GmbH PCCL, Roseggerstrasse 12, 8700 Leoben, Austria
    Search for more papers by this author
  • Matthias Edler,

    1. University of Leoben, Chair of Chemistry of Polymeric Materials, Otto-Glöckel-Strasse 2, 8700 Leoben, Austria
    Search for more papers by this author
  • Thomas Griesser,

    1. University of Leoben, Chair of Chemistry of Polymeric Materials, Otto-Glöckel-Strasse 2, 8700 Leoben, Austria
    Search for more papers by this author
  • Gerald Weidinger,

    1. AT&S Austria Technologie & Systemtechnik Aktiengesellschaft, Fabriksgasse 13, 8700 Leoben, Austria
    Search for more papers by this author
  • Frank Wiesbrock

    Corresponding author
    1. Graz University of Technology, Institute for Chemistry and Technology of Materials, Stremayrgasse 9/V, 8010 Graz, Austria, Fax: (+ 43) 316 873 10 32283
    • Graz University of Technology, Institute for Chemistry and Technology of Materials, Stremayrgasse 9/V, 8010 Graz, Austria, Fax: (+ 43) 316 873 10 32283.
    Search for more papers by this author

Abstract

Copoly(2-oxazoline)-based photoresists are prepared from pEtOx80Bu=Ox20 and pPhOx80Dc=Ox20, respectively, a tetrathiol, and a photosensitive initiator. It is possible to prepare copoly(2-oxazoline)s bearing unsaturated side chains in a microwave reactor on a decagram scale in reaction times of 100 min or shorter. UV irradiation of dried polymer films through a quartz mask induces the thiol-ene reaction in the illuminated areas. Subsequent development of the polymer films in halogen-free solvents reproduces the negative pattern of the mask with a resolution of 2 μm. The pEtOx80Bu=Ox20-derived photoresists can also be developed in water.

Ancillary