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Organic Nonvolatile Resistive Switching Memory Based on Molecularly Entrapped Fullerene Derivative within a Diblock Copolymer Nanostructure

Authors

  • Hanju Jo,

    1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151–742, Republic of Korea
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  • Jieun Ko,

    1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151–742, Republic of Korea
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  • Jung Ah Lim,

    Corresponding author
    1. Future Convergence Research Division, Korea Institute of Science and Technology, Seoul 136–791, Republic of Korea
    • Future Convergence Research Division, Korea Institute of Science and Technology, Seoul 136–791, Republic of Korea.
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  • Hye Jung Chang,

    1. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136–791, Republic of Korea
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  • Youn Sang Kim

    Corresponding author
    1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151–742, Republic of Korea
    2. Advanced Institutes of Convergence Technology, Suwon Gyeonggi-do 443–270, Republic of Korea
    • Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151–742, Republic of Korea
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Abstract

Organic nonvolatile resistive switching memory is developed via selective incorporation of fullerene derivatives, [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), into the nanostructure of self-assembled poly(styrene-b-methyl methacrylate) (PS10-b-PMMA130) diblock copolymer. PS10-b-PMMA130 diblock copolymer provides a spatially ordered nanotemplate with a 10-nm PS nanosphere domain surrounded by a PMMA matrix. Spin casting of the blend solution of PS10-b-PMMA130 and PCBM spontaneously forms smooth films without PCBM aggregation in which PCBM molecules are incorporated within a PS nanosphere domain of PS10-b-PMMA130 nanostructure by preferential intermixing propensity of PCBM and PS. Based on the well-defined PS10-b-PMMA130/PCBM nanostructure, resistive random access memory (ReRAM) exhibits significantly improved bipolar-switching behavior with stable and reproducible properties at low operating voltages (RESET at 1.3 V and SET at −1.5 V) under ambient conditions. Finally, flexible memory devices are achieved using a nanostructured PS10-b-PMMA130/PCBM composite in which no significant degradation of electrical properties is observed before and after bending.

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