Organic Nonvolatile Resistive Switching Memory Based on Molecularly Entrapped Fullerene Derivative within a Diblock Copolymer Nanostructure
Version of Record online: 27 DEC 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Macromolecular Rapid Communications
Volume 34, Issue 4, pages 355–361, February 25, 2013
How to Cite
Jo, H., Ko, J., Lim, J. A., Chang, H. J. and Kim, Y. S. (2013), Organic Nonvolatile Resistive Switching Memory Based on Molecularly Entrapped Fullerene Derivative within a Diblock Copolymer Nanostructure. Macromol. Rapid Commun., 34: 355–361. doi: 10.1002/marc.201200614
- Issue online: 13 FEB 2013
- Version of Record online: 27 DEC 2012
- Manuscript Revised: 30 OCT 2012
- Manuscript Received: 14 SEP 2012
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