Article

Influence of Titanium Tetrabutoxide on Nanoindentation and Nanoscratch Profiles of Silsesquioxane Films

  1. Lijiang Hu*,
  2. Di Wang,
  3. Zushun Lu,
  4. Yanwei Song,
  5. Changmei Song

Article first published online: 11 JUL 2008

DOI: 10.1002/masy.200850715

Issue

Macromolecular Symposia

Macromolecular Symposia

Special Issue: Nanostructured Polymers and Polymer Nanocomposites

Volume 267, Issue 1, pages 85–89, June 2008

Additional Information

How to Cite

Hu, L., Wang, D., Lu, Z., Song, Y. and Song, C. (2008), Influence of Titanium Tetrabutoxide on Nanoindentation and Nanoscratch Profiles of Silsesquioxane Films. Macromol. Symp., 267: 85–89. doi: 10.1002/masy.200850715

Author Information

  1. Department of Applied Chemistry, Harbin Institute of Technology, Box 713, Harbin 150001, China

*Department of Applied Chemistry, Harbin Institute of Technology, Box 713, Harbin 150001, China.

Publication History

  1. Issue published online: 11 JUL 2008
  2. Article first published online: 11 JUL 2008

Funded by

  • Department of Science and Technology of the Government of Heilongjiang Province. Grant Numbers: GB04A204, ZJG0506-02

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Keywords:

  • elastic modulus;
  • film;
  • hardness;
  • nanoindentation;
  • nanoscratch;
  • scratch;
  • silsesquioxane;
  • titanium tetrabutoxide

Abstract

Based on silsesquioxanes (SSO) derived from the hydrolytic condensation of [3-(glacildoxy)propyl]trimethoxysilane (GPMS), 20 wt-% tetraethoxysilane (TEOS) and titanium tetrabutoxide (TTB), two-layer SSO films were prepared for nanoindentation and nanoscratch tests. The tests were carried out to study the influence of different amounts of TTB in the two-layer hybrid films on hardness (H), elastic modulus (E) and scratch (S) testing profiles. The H profiles of the modified films showed two kinds of H corresponding to the two–layer structure. In the S testing profiles, all final–scan profiles did not absolutely coincide or overlap with the first–scan profiles. All S profiles revealed a fluctuanting characteristic and all S profiles can be divided into two regions in the horizontal displacement, because of the two-layer structure. The film containing an adequate amount of TTB (20 wt-%) was found to possess the largest H and E, as well as the best S resistance.

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