Article

Comparison of Operating Mechanisms for the Poly(N-vinylcarbazole) Based Non-Volatile Memory Devices

  1. Jin-Sik Choi,
  2. Dong Hack Suh*

Article first published online: 21 JUL 2008

DOI: 10.1002/masy.200850817

Issue

Macromolecular Symposia

Macromolecular Symposia

Special Issue: Advanced Polymer Materials for Photonics and Electronics

Volume 268, Issue 1, pages 81–85, July 2008

Additional Information

How to Cite

Choi, J.-S. and Suh, D. H. (2008), Comparison of Operating Mechanisms for the Poly(N-vinylcarbazole) Based Non-Volatile Memory Devices. Macromol. Symp., 268: 81–85. doi: 10.1002/masy.200850817

Author Information

  1. Department of Chemical Engineering, Hanyang University, Seoul 133–791, Korea

*Department of Chemical Engineering, Hanyang University, Seoul 133–791, Korea Fax: +82-2-2220-4523;

Publication History

  1. Issue published online: 21 JUL 2008
  2. Article first published online: 21 JUL 2008

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Keywords:

  • charge transfer;
  • filament;
  • organic non-volatile memory devices;
  • space charge limited current;
  • thin Film

Abstract

Summary: The organic non-volatile memory devices (NVMs) based on poly(N-vinylcarbazole) (PVK) with the different structures and compositions were fabricated and evaluated. The resistance states in the devices were controlled by the external electric field and exhibited the distinctive properties; the device with a single PVK layer was a write-once read-many-times memory by the field induced filament as a conduction path and its memory properties depended on the PVK thickness, the PVK/Al/PVK structured device was operated by a space charge limited current model and was sensitive to preparing condition of the internal Al layer, and the device performances with the PVK based charge transfer complex depended on the composition of the CT materials and the surface condition of the bottom electrode.

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