Design of active inductors in SiGe/SiGe:C processes for RF applications
Article first published online: 11 JUL 2007
Copyright © 2007 Wiley Periodicals, Inc.
International Journal of RF and Microwave Computer-Aided Engineering
Volume 17, Issue 5, pages 455–468, September 2007
How to Cite
Chakravorty, A., Scholz, R. F., Senapati, B., Garg, R. and Maiti, C. K. (2007), Design of active inductors in SiGe/SiGe:C processes for RF applications. Int J RF and Microwave Comp Aid Eng, 17: 455–468. doi: 10.1002/mmce.20233
- Issue published online: 30 JUL 2007
- Article first published online: 11 JUL 2007
- Manuscript Accepted: 8 AUG 2006
- Manuscript Received: 17 MAY 2006
- bipolar active inductor;
- RF applications
Applicability of silicon-based heterojunction bipolar processes is investigated for designing active inductors with high quality factors (Q). Results for grounded type one-port active inductor incorporating frequency-dependent as well as frequency-independent negative resistances are examined. Later, the negative resistance aspect is extended from one-port to two-port active inductor circuit to ensure its use as a series element. The enhanced Q-values of all the inductive circuits are observed in accordance with the theory. Moderately high-Q values (∼100) with considerable inductances (∼0.2–1 nH) are obtained in the RF frequency ranges (∼5–9 GHz). © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.