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Accurate distributed and semidistributed models of field effect transistors for millimeter wave applications

Authors

  • Yongbo Chen,

    Corresponding author
    1. EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China
    • EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China
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  • Yunchuan Guo,

    1. EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China
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  • Wen Huang,

    1. EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China
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  • Ruimin Xu

    1. EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China
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Abstract

An accurate distributed model of field effect transistors, including the parasitic impedances of the electrodes and the mutual coupling between them for analyzing the propagation effects along the electrodes working at millimeter wave frequencies, is presented. A numerical method is used to calculate the S-parameters of the distributed model. Then, a corresponding simpler semidistributed model, which avoids solving coupled differential equations, is then presented. A GaAs pHEMT example is given to show the well agreement of the S-parameters of the measurement and the distributed model ranging from 1 to 60 GHz. The S-parameters of the semidistributed model agree well with that of the distributed model up to 100 GHz, and both of the models can be applied for S-parameters prediction out of the measurement equipment range. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.

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