Calculated gain and threshold current density for interconduction-subband transition in Si triple-quantum-well-structures

  1. Sumitra Ghosh,
  2. Bratati Mukhopadhyay,
  3. P. K. Basu

Article first published online: 21 NOV 2002

DOI: 10.1002/mop.10641

Issue

Microwave and Optical Technology Letters

Microwave and Optical Technology Letters

Volume 35, Issue 6, pages 470–475, 20 December 2002

Additional Information

How to Cite

Ghosh, S., Mukhopadhyay, B. and Basu, P. K. (2002), Calculated gain and threshold current density for interconduction-subband transition in Si triple-quantum-well-structures. Microw. Opt. Technol. Lett., 35: 470–475. doi: 10.1002/mop.10641

Author Information

  1. Institute of Radio Physics and Electronics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009, India

Publication History

  1. Issue published online: 21 NOV 2002
  2. Article first published online: 21 NOV 2002
  3. Manuscript Received: 10 JUN 2002

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Keywords:

  • intersubband lasers;
  • quantum cascade lasers;
  • Si-SiGe quantum wells;
  • mid infrared emitter

Abstract

We have theoretically demonstrated population inversion between two conduction subbands in a silicon quantum well in a triple-well structure with Si and SiGe, considering tunneling, radiative- and non-radiative-acoustic, and g-phonon transitions. The gain spectra are then calculated and threshold current densities are estimated. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 470–475, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10641

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