A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices

  1. Ban Leong Ooi,
  2. Bo Chen,
  3. Fujiang Lin,
  4. Pang Shyan Kooi,
  5. Chi So Hui

Article first published online: 21 NOV 2002

DOI: 10.1002/mop.10648

Issue

Microwave and Optical Technology Letters

Microwave and Optical Technology Letters

Volume 35, Issue 6, pages 499–502, 20 December 2002

Additional Information

How to Cite

Ooi, B. L., Chen, B., Lin, F., Kooi, P. S. and Hui, C. S. (2002), A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices. Microw. Opt. Technol. Lett., 35: 499–502. doi: 10.1002/mop.10648

Author Information

  1. Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260

Publication History

  1. Issue published online: 21 NOV 2002
  2. Article first published online: 21 NOV 2002
  3. Manuscript Received: 14 JUN 2002

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Keywords:

  • thermal resistance;
  • bipolar transistor;
  • HBT;
  • parameter extraction

Abstract

A simple, robust, accurate method to extract the thermal resistance of BJT/HBT devices is proposed, which only needs the measured device DC I-V characteristics at room temperature. No optimization is needed to extract the thermal resistance. The proposed method is verified using a variety of BJT/HBT devices. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 499–502, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10648

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