A fully integrated concurrent dual-band CMOS low-noise amplifier

  1. Y. P. Zhang,
  2. K. W. Chew,
  3. P. F. Wong,
  4. M. A. Do

Article first published online: 5 AUG 2003

DOI: 10.1002/mop.11124

Issue

Microwave and Optical Technology Letters

Microwave and Optical Technology Letters

Volume 39, Issue 1, pages 52–53, 5 October 2003

Additional Information

How to Cite

Zhang, Y. P., Chew, K. W., Wong, P. F. and Do, M. A. (2003), A fully integrated concurrent dual-band CMOS low-noise amplifier. Microw. Opt. Technol. Lett., 39: 52–53. doi: 10.1002/mop.11124

Author Information

  1. Integrated Systems Research Lab School of EEE, Nanyang Technological University, Singapore

Publication History

  1. Issue published online: 5 AUG 2003
  2. Article first published online: 5 AUG 2003
  3. Manuscript Received: 8 MAR 2003

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Keywords:

  • CMOS;
  • low-noise amplifier;
  • RF circuits

Abstract

This paper presents a fully integrated concurrent dual-band CMOS low-noise amplifier (LNA). The LNA is implemented in a standard 0.18-μm 6M1P CMOS process and is designed from the system viewpoint to provide higher gain at the higher band, for the first time, to compensate the higher-band signal's extra loss over the air transmission. The LNA drains 5.3 mA of current from a 1.8-V supply voltage and achieves voltage gains of 16 and 22.5 dB, input return losses of 28 and 27 dB, and noise figures of 3.0 and 3.1 dB at 2.4 and 5.2 GHz, respectively. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 52–53, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11124

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