Ga0.51In0.49P/InxGa1−xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)

  1. Yo-Sheng Lin1,
  2. Chih-Chen Chen1,
  3. Shey-Shi Lu2

Article first published online: 5 AUG 2003

DOI: 10.1002/mop.11126

Issue

Microwave and Optical Technology Letters

Microwave and Optical Technology Letters

Volume 39, Issue 1, pages 56–62, 5 October 2003

Additional Information

How to Cite

Lin, Y.-S., Chen, C.-C. and Lu, S.-S. (2003), Ga0.51In0.49P/InxGa1−xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs). Microw. Opt. Technol. Lett., 39: 56–62. doi: 10.1002/mop.11126

Author Information

  1. 1

    Department of Electrical Engineering, National Chi-Nan University, Puli, Taiwan, R.O.C.

  2. 2

    Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

Publication History

  1. Issue published online: 5 AUG 2003
  2. Article first published online: 5 AUG 2003
  3. Manuscript Received: 5 MAR 2003

Funded by

  • National Science Council of R.O.C.. Grant Number: NSC91-2218-E260-006

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Keywords:

  • strained;
  • Ga0.51In0.49P;
  • In0.2Ga0.8As;
  • doped-channel FETs;
  • MMIC

Abstract

In this paper, lattice-matched Ga0.51In0.49P/GaAs and strained Ga0.51In0.49P/In0.2Ga0.8As doped-channel FETs (DCFETs) were investigated in terms of DC and microwave performances, including frequency response, noise figure, power-added efficiency (PAE), and output power. In addition, small-signal and large-signal models were created for designing monolithic microwave integrated circuits (MMICs). The heterostructures were both grown by gas-source molecular beam epitaxy (GSMBE) on semi-insulating (100) GaAs substrates. In situ reflection high-energy electron diffraction (RHEED) was used to calibrate the growth rate of InP and GaP. Because of the high etching selectivity between Ga0.51In0.49P and In0.2Ga0.8As/GaAs, the uniformity of the measured electrical properties of our fabricated devices is quite satisfying, which indicates that these Ga0.51In0.49P/InxGa1−xAs structures are very suitable for mass production. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 56–62, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11126

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