Using a low-voltage intermodulation distortion sweet-spot for controlling gain in HEMT amplifiers

  1. Emigdio Malaver,
  2. José Ángel García,
  3. Antonio Tazón,
  4. Angel Mediavilla

Article first published online: 5 AUG 2003

DOI: 10.1002/mop.11129

Issue

Microwave and Optical Technology Letters

Microwave and Optical Technology Letters

Volume 39, Issue 1, pages 67–70, 5 October 2003

Additional Information

How to Cite

Malaver, E., García, J. Á., Tazón, A. and Mediavilla, A. (2003), Using a low-voltage intermodulation distortion sweet-spot for controlling gain in HEMT amplifiers. Microw. Opt. Technol. Lett., 39: 67–70. doi: 10.1002/mop.11129

Author Information

  1. Department of Communication, Engineering University of Cantabria, Santander 39005, Spain

Publication History

  1. Issue published online: 5 AUG 2003
  2. Article first published online: 5 AUG 2003
  3. Manuscript Received: 12 MAR 2003

Funded by

  • Spanish Government CICYT. Grant Number: TIC2002-04084-C03-03
  • ARCO. Grant Number: TIC2000-0401-P4-09
  • Universidad de Los Andes, Venezuela

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Keywords:

  • HEMT amplifier;
  • intermodulation distortion;
  • amplifier linearity

Abstract

In this paper, a low-voltage high-linearity sweet-spot, associated with an adjustable transconductance, is proposed for implementing a simple and highly linear HEMT-based gain control strategy. The proposed approach, based on a selective gate and drain biasing technique, is compared with the conventional solution under two-tone and multitone excitations. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 67–70, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11129

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