• oscillator;
  • temperature compensation;
  • CMOS


This article presents a simple complementary metal-oxide-semiconductor (CMOS) ring oscillator using a voltage-controlled delay and RS-latch, including a compensation circuit for the process and temperature variations.The compensation circuit, added to the original bias circuit, is a simple current sinker which is referenced through a current mirror circuit. The proposed oscillator was designed and implemented using a 0.13 μm CMOS process. The oscillator exhibited a significantly improved frequency variation of ±4.25% for a wide temperature range of from −40 to 80°C. Without the compensation circuit, the variation would have been ±13.39% from the center frequency of 2.33 MHz. The oscillator also showed a low sensitivity of 0.084% to process variation, according to a Monte-Carlo simulation with 1000 iterations. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:160–163, 2012, 2012; View this article online at DOI 10.1002/mop.26493