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A dual-resonance injection-locked frequency doubler in 0.18 μm CMOS technology

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Abstract

This article proposes a dual-resonance CMOS LC-tank injection-locked frequency doubler (ILFD) fabricated in the 0.18 μm CMOS process and describes the circuit design, operation principle, and measurement results of the ILFD. The ILFD circuit is composed of a dual-resonance first-harmonic injection-locked oscillator with dual-injection ports, a wide-band frequency doubler, and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 5.39 mW. At the incident power of 0 dBm, the ILFD has high/low operation range from the incident frequency 3.9/1.7 to 6.1/2 GHz to provide a dual-band signal source with the frequency 7.8/3.4–12.2/4 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:193–196, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26501

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