Research Article

A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers

  1. Yasunori Yonekuta1,
  2. Kenji Honda2,
  3. Hiroyuki Nishide1,*

Article first published online: 28 NOV 2007

DOI: 10.1002/pat.1006

Issue

Polymers for Advanced Technologies

Polymers for Advanced Technologies

Volume 19, Issue 4, pages 281–284, April 2008

Additional Information

How to Cite

Yonekuta, Y., Honda, K. and Nishide, H. (2008), A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers. Polymers for Advanced Technologies, 19: 281–284. doi: 10.1002/pat.1006

Author Information

  1. 1

    Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan

  2. 2

    Advanced Research Center for Science and Engineering, Waseda University, Tokyo 162-0041, Japan

*Department of Applied Chemistry, Waseda University, Tokyo 169-8555, Japan.

Publication History

  1. Issue published online: 26 MAR 2008
  2. Article first published online: 28 NOV 2007
  3. Manuscript Accepted: 31 AUG 2007
  4. Manuscript Received: 21 JUN 2007

Funded by

  • Grants-in-Aids for Scientific Research. Grant Numbers: 19105003, 17067017
  • Global COE Program

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Keywords:

  • radical polymer;
  • nitroxide radical;
  • polymer memory;
  • I-V characteristics

Abstract

A non-volatile, bistable, and rewritable organic memory device was successfully fabricated with the layers of poly(2,2,6,6-tetramethylpiperidine-1-oxyl methacrylate) (PTMA) and poly(methyl methacrylate) (PMMA) containing silver salt. The PTMA layer was employed as a p-dopable material, while the silver salt-dispersed PMMA layer acted as an n-dopable material. The ON–OFF ratio between low-conductivity and high-conductivity states amounted to more than four orders of magnitude, and the retention time was longer than 103 sec. The device was characterized by excellent rewritability. Copyright © 2007 John Wiley & Sons, Ltd.

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