Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target
Article first published online: 25 MAY 2010
Copyright © 2010 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 19, Issue 2, pages 160–164, March 2011
How to Cite
Shi, J. H., Li, Z. Q., Zhang, D. W., Liu, Q. Q., Sun, Z. and Huang, S. M. (2011), Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target. Prog. Photovolt: Res. Appl., 19: 160–164. doi: 10.1002/pip.1001
- Issue published online: 23 FEB 2011
- Article first published online: 25 MAY 2010
- Manuscript Revised: 4 APR 2010
- Manuscript Received: 16 MAR 2010
- National Natural Science Foundation of China. Grant Number: 10774046
- Shanghai Municipal Science and Technology Commission Foundation. Grant Numbers: 09JC1404600, 0852nm06100, 08230705400
- solar cell;
- thin film;
Single-layered Cu-In-Ga-Se precursors were fabricated by one-step sputtering of a single quaternary Cu(In,Ga)Se2 (CIGS) chalcogenide target at room temperature, followed by post selenization using Se vapor obtained from elemental Se pellets. The morphological and structural properties of both as-deposited and selenized films were characterized by X-ray diffraction (XRD), Raman spectroscope and scanning electron microscope (SEM). The precursor films exhibited a chalcopyrite structure with a preferential orientation in the (112) direction. The post-selenization process at high-temperature significantly improved the quality of the chalcopyrite CIGS. The CIGS layers after post-selenization were used to fabricate solar cells. The solar cell had an open-circuit voltage Voc of 0.422 V, a short-circuit current density J = 24.75 mA, a fill factor of 53.29%, and an efficiency of 7.95%. Copyright © 2010 John Wiley & Sons, Ltd.