UV-nano-imprint lithography technique for the replication of back reflectors for n-i-p thin film silicon solar cells
Article first published online: 26 AUG 2010
Copyright © 2010 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 19, Issue 2, pages 202–210, March 2011
How to Cite
Söderström, K., Escarré, J., Cubero, O., Haug, F.-J., Perregaux, S. and Ballif, C. (2011), UV-nano-imprint lithography technique for the replication of back reflectors for n-i-p thin film silicon solar cells. Prog. Photovolt: Res. Appl., 19: 202–210. doi: 10.1002/pip.1003
- Issue published online: 23 FEB 2011
- Article first published online: 26 AUG 2010
- Manuscript Revised: 6 APR 2010
- Manuscript Received: 9 DEC 2009
- thin film solar cells;
- back reflector;
Texturing of interfaces in thin film silicon solar cells is essential to enhance the produced photocurrent and thus the efficiencies. A UV nano-imprint-lithography (UV-NIL) replication process was developed to prepare substrates with textures that are suitable for the growth of n-i-p thin film silicon solar cells. Morphological and optical analyses were performed to assess the quality of the replicas. A comparison of single junction amorphous solar cells on the original structures and on their replicas on glass revealed good light trapping and excellent electrical properties on the replicated structures. A tandem amorphous silicon/amorphous silicon (a-Si/a-Si) cell deposited on a replica on plastic exhibits a stabilized efficiency of 8.1% and a high yield of 90% of good cells in laboratory conditions. It demonstrates the possibility to obtain appropriate structure on low cost plastic substrate. Copyright © 2010 John Wiley & Sons, Ltd.