Research: Short Communication
Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells
Article first published online: 24 NOV 2010
Copyright © 2010 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 19, Issue 2, pages 187–191, March 2011
How to Cite
Bertoni, M.I., Hudelson, S., Newman, B.K., Fenning, D.P., Dekkers, H.F.W., Cornagliotti, E., Zuschlag, A., Micard, G., Hahn, G., Coletti, G., Lai, B. and Buonassisi, T. (2011), Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells. Prog. Photovolt: Res. Appl., 19: 187–191. doi: 10.1002/pip.1008
- Issue published online: 23 FEB 2011
- Article first published online: 24 NOV 2010
- Manuscript Revised: 20 APR 2010
- Manuscript Received: 11 FEB 2010
- hydrogen passivation;
- multicrystalline silicon
We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We analyze a solar cell with alternating mm-wide bare and SiNx-coated stripes using laser-beam-induced current, electron backscatter diffraction, X-ray fluorescence microscopy, and defect etching to correlate pre- and post-hydrogenation recombination activity with GB character, density of iron-silicide nanoprecipitates, and dislocations. A strong correlation was found between GB recombination activity and the nature/density of etch pits along the boundaries, while iron silicide precipitates above detection limits were found to play a less significant role. Copyright © 2010 John Wiley & Sons, Ltd.