Role of hydrogen in the surface passivation of crystalline silicon by sputtered aluminum oxide
Article first published online: 26 AUG 2010
Copyright © 2010 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 19, Issue 3, pages 320–325, May 2011
How to Cite
Li, T.-T. A. and Cuevas, A. (2011), Role of hydrogen in the surface passivation of crystalline silicon by sputtered aluminum oxide. Prog. Photovolt: Res. Appl., 19: 320–325. doi: 10.1002/pip.1031
- Issue published online: 4 APR 2011
- Article first published online: 26 AUG 2010
- Manuscript Revised: 21 APR 2010
- Manuscript Received: 29 OCT 2009
- aluminum oxide;
- surface passivation;
Aluminum oxide films can provide excellent surface passivation on both p-type and n-type surfaces of silicon wafers and solar cells. Even though radio frequency magnetron sputtering is capable of depositing aluminum oxide with concentrations of negative charges comparable to some of the other deposition methods, the surface passivation has not been as good. In this paper, we compare the composition and bonding of aluminum oxide deposited by thermal atomic layer deposition and sputtering, and find that the interfacial silicon oxide layer and hydrogen concentration can explain the differences in the surface passivation. Copyright © 2010 John Wiley & Sons, Ltd.