Optimization of interdigitated back contact silicon heterojunction solar cells: tailoring hetero-interface band structures while maintaining surface passivation

Authors

  • Meijun Lu,

    1. Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
    Current affiliation:
    1. The DuPont Company, Experimental Station E500/4603A, Rt 141 and Henry Clay, Wilmington, DE 19880, USA.
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  • Ujjwal Das,

    Corresponding author
    1. Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
    • Institute of Energy Conversion, University of Delaware, 451 Wyoming Road, Newark, DE 19716, USA.
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  • Stuart Bowden,

    1. Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
    Current affiliation:
    1. Solar Power Laboratories, School of Electrical Engineering, Arizona State University, 770 South River Parkway, Tempe, AZ 85287.
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  • Steven Hegedus,

    1. Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
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  • Robert Birkmire

    1. Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
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Abstract

Interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have the potential for high open circuit voltage (VOC) due to the surface passivation and heterojunction contacts, and high short circuit current density (JSC) due to all back contact design. Intrinsic amorphous silicon (a-Si:H) buffer layer at the rear surface improve the surface passivation hence VOC and JSC, but degrade fill factor (FF) from an “S” shape JV curve. Two-dimensional (2D) simulation using “Sentaurus device” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero-interface. Three approaches to the buffer layer are suggested to improve the FF: (1) reduced thickness, (2) increased conductivity, and/or (3) reduced band gap. Experimental IBC-SHJ solar cells with reduced buffer thickness (<5 nm) and increased conductivity with low boron doping significantly improves FF, consistent with simulation. However, this has only marginal effect on efficiency since JSC and VOC also decrease due to poor surface passivation. A narrow band gap a-Si:H buffer layer improves cell efficiency to 13.5% with unoptimized passivation quality. These results demonstrate that tailoring the hetero-interface band structure is critical for achieving high FF. Simulations predicts that efficiences >23% are possible on planar devices with optimized pitch dimensions and achievable surface passivation, and 26% with light trapping. This work provides criterion to design IBC-SHJ solar cell structures and optimize cell performance. Copyright © 2010 John Wiley & Sons, Ltd.

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