Paper presented at 25th EU PVSEC WCPEC-5, Valencia, Spain, 2010
Transport properties of p-type compensated silicon at room temperature
Article first published online: 11 NOV 2010
Copyright © 2010 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Special Issue: 25th EU PVSEC WCPEC-5, Valencia, Spain, 2010
Volume 19, Issue 7, pages 787–793, November 2011
How to Cite
Rougieux, F.E., Macdonald, D. and Cuevas, A. (2011), Transport properties of p-type compensated silicon at room temperature. Prog. Photovolt: Res. Appl., 19: 787–793. doi: 10.1002/pip.1036
- Issue published online: 19 OCT 2011
- Article first published online: 11 NOV 2010
- Manuscript Revised: 14 JUL 2010
- Manuscript Received: 26 MAY 2010
- Hall Factor
Deliberate dopant compensation has proven to be an effective way to control ingot resistivity, although the impact of compensation on carrier recombination and mobilities remains under investigation. This paper summarizes recent findings regarding the carrier transport properties of compensated silicon. The capacity of common mobility models to describe compensated silicon is reviewed and compared to experimental data. The observed reduction of both majority and minority carrier mobility due to dopant compensation is described in terms of the underlying scattering mechanisms. The related problem of conversion between resistivity and dopant density in compensated silicon is discussed, and published values of the Hall Factor in compensated silicon are reviewed. Copyright © 2010 John Wiley & Sons, Ltd.