Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells
Article first published online: 18 NOV 2010
Copyright © 2010 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 19, Issue 4, pages 442–452, June 2011
How to Cite
Wheeldon, J. F., Valdivia, C. E., Walker, A. W., Kolhatkar, G., Jaouad, A., Turala, A., Riel, B., Masson, D., Puetz, N., Fafard, S., Arès, R., Aimez, V., Hall, T. J. and Hinzer, K. (2011), Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells. Prog. Photovolt: Res. Appl., 19: 442–452. doi: 10.1002/pip.1056
- Issue published online: 5 MAY 2011
- Article first published online: 18 NOV 2010
- Manuscript Revised: 11 JUN 2010
- Manuscript Received: 19 MAR 2010
- concentrated photovoltaics;
- tunnel junctions;
- multijunction solar cell
Four tunnel junction (TJ) designs for multijunction (MJ) solar cells under high concentration are studied to determine the peak tunnelling current and resistance change as a function of the doping concentration. These four TJ designs are: AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs. Time-dependent and time-average methods are used to experimentally characterize the entire current–voltage profile of TJ mesa structures. Experimentally calibrated numerical models are used to determine the minimum doping concentration required for each TJ design to operate within a MJ solar cell up to 2000-suns concentration. The AlGaAs/GaAs TJ design is found to require the least doping concentration to reach a resistance of <10−4 Ω cm2 followed by the GaAs/GaAs TJ and finally the AlGaAs/AlGaAs TJ. The AlGaAs/InGaP TJ is only able to obtain resistances of ≥5 × 10−4 Ω cm2 within the range of doping concentrations studied. Copyright © 2010 John Wiley & Sons, Ltd.