Paper presented at 25th EU PVSEC WCPEC-5, Valencia, Spain, 2010
Development of industrial high-efficiency back-contact czochralski-silicon solar cells
Article first published online: 5 JAN 2011
Copyright © 2011 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Special Issue: 25th EU PVSEC WCPEC-5, Valencia, Spain, 2010
Volume 19, Issue 7, pages 887–893, November 2011
How to Cite
Gee, J. M., Kumar, P., Howarth, J., Schroeder, T., Franklin, J., Dominguez, J. and Tanner, D. (2011), Development of industrial high-efficiency back-contact czochralski-silicon solar cells. Prog. Photovolt: Res. Appl., 19: 887–893. doi: 10.1002/pip.1075
- Issue published online: 19 OCT 2011
- Article first published online: 5 JAN 2011
- Manuscript Revised: 29 SEP 2010
- Manuscript Received: 27 MAY 2010
- silicon solar cells;
- back-contact solar cells;
Back-contact silicon solar cells feature high efficiencies, simpler module assembly, and improved aesthetics. The emitter wrap through (EWT) cell structure is particularly attractive for use with industrial processing (e.g., screen-printed metallization) and common solar-grade p-type Si materials. We report development of a high-efficiency EWT back-contact cell using p-type Cz silicon and only industrial processing techniques such as screen-printed metallizations, diffusions, and PECVD. An efficiency of 19.0% has been achieved with large area (156-mm pseudo-square) cells. Detailed characterization and modeling have been performed to understand the optical and electrical losses, and these results were used to generate a roadmap to improve the efficiency to over 20%. Copyright © 2011 John Wiley & Sons, Ltd.